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Notice that at these higher dose levels the two branches of the curves are rather close together, and the relationship to the linear behavior in the high-dose portion of the curves in Fig. 10b is becoming more apparent. In this case, the total difference in flat-band voltage at the initial point A and final point C is only about 2 V even though the device has accumulated 5 x 10" rads more by the final point than it had at the initial point. Thus we see that as the device acquires more and more cumulative dose the various branches of the type 2 curves begin to fall closer and closer to one another and to approach a general asymptotic structure similar to the curve for D = 30 in Fig.

The nondynamic equilibrium behavior exhibited in segment f would continue indefinitely if it were not for the sudden switch from positive to negative increments in gate-bias voltage occurring at Vgr = + 10 V and D = 27 units as shown in Fig. 13a. In segment g, the device is once more being brought closer to a dynamic equilibrium mode, since Vgr is decreasing between irradiation increments. Finally, for segment h dynamic equilibrium is actually achieved. Note that 36 J . N. CHURCHILL et 20 al. 30 25 35 Cumulative dose D -1 0 2 1 0, -9 -1, - 7 Vgr = 0 -2, -5 d -3 I aA " 5 10 15 20 25 Normalizeddose 30 35 40 (b) FIG.

13c. Since Fig. 13b is a piecewise-linear approximation to the actual curves, we should expect that Fig. 13c likewise will be a piecewise-linear approximation to the curves which would be obtained in an actual experiment using the specific function V,,(D) defined in Fig. 13a. By tracing out the curve in Fig. 13b on a point-by-point basis, one can easily verify that the line segments labeled a, b, f, and g in Fig. 13c all correspond to points on the sloping line in Fig. 13b. In other words, these particular line segments are traced out while the combination of V,, and D falls outside the dynamic equilibrium range.

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