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Download Envelope Tracking Power Amplifiers for Wireless by Zhancang Wang PDF

By Zhancang Wang

This booklet supplies whole creation, concept, and layout issues on envelope monitoring for instant communications.

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Example text

In an Si-LDMOS, as in a MOSFET, there are two n+ regions for the source and the drain, respectively. The most noticeable difference as compared to a MOSFET is in the low doped and quite long n-drift region realized in the LDMOS, which enhances the depletion region. Si-LDMOS has low doped and long n-type drift regions, which enhances the depletion region and increases the breakdown voltage. However, the on-resistance is high, which increases the losses and degrades the RF performance [43]. Therefore, there is always a trade-off between RF output power and on-resistance.

Sufficient gain and phase matching are therefore difficult to realize. 34 High-Efficiency ���������������������������� Power Amplifier ����������������������������� Architectures and Devices Although this technology had demonstrated elegant efficiency with acceptable linearity for handset or terminal application scenarios, it is still challenging to apply it to a high-power design such as a base station with consideration of nonideal factors such as the branch mismatch, combiner loss, and RF PA cell mismatching.

31 Theoretical efficiency behavior of multistage Doherty PA with one to two peak cells for illustration of efficiency drop-down compensation. multistage Doherty output combination network have been widely investigated and researched. 4 LINC and Outphasing The linear amplification using nonlinear components (LINC) technique was proposed by Cox in 1974 [31] as a transmitter technology with efficiency and linearity improvements. 32(b), which utilizes two outphasing paths to amplify constant envelope signal in the saturation region of RF PA to achieve high efficiency, while the combination of the two paths cancels the distortions and restores a linear output amplitude modulated signal.

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