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Download High speed VCSELs for optical interconnects by Alex Mutig PDF

By Alex Mutig

The transmission pace of information communique structures is forecast to extend exponentially over the following decade. improvement of either Si-based high-speed drivers in addition to III-V-semiconductor-based high-speed vertical hollow space floor emitting lasers (VCSELs) are necessities for destiny ultrahigh data-rate structures. This thesis offers: - a survey of the current state-of-the-art of VCSELs - a scientific research of many of the results restricting current VCSELs - a listing of ideas to beat current limits - special growth in modelling, fabricating and trying out the at present so much complex VCSELs on the commercially most crucial wavelengths.

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Moreover, these phenomena are not independent from each other but build in their strong and commonly non-linear interactions a complex picture of the physical processes inside of a device. For example current flow generates heat, temperature changes affect among other electrical resistance and refractive index of semiconductor materials, presenting photons change carrier concentrations due to absorption and so on. Many physical processes naturally arise from interactions between different fields or particles.

Appendix presents description of the measurement setups used for investigations in the scope of this dissertation. Setups for measurement of static and dynamic VCSEL characteristics and used equipment are described in details. References 1. html 2. Soda H, Iga K, Kitahara C, Suematsu Y (1979) GaInAsP/InP surface emitting injection lasers. Jpn J Appl Phys 18(12):2329–2330 3. Iga K, Koyama F, Kinoshita S (1988) Surface emitting semiconductor lasers. IEEE J Quant Electron 24(9):1845–1855 4. Lee YH, Tell B, Brown-Goebeler KF, Leibenguth RE, Mattera VD (1991) Deep-red continuous wave top-surface-emitting vertical-cavity AlGaAs superlattice lasers.

IEEE Electron Lett 45(7) 56. Ko J, Hegblom ER, Akulova Y, Thibeault BJ, Coldren LA (1997) Low-threshold 840-nm laterally oxidized vertical-cavity lasers using AlInGaAs–AlGaAs strained active layers. IEEE Photon Technol Lett 9(7):863–865 References 17 57. Kuo HC, Chang YS, Lai FY, Hsueh TH, Laih LH, Wang SC (2003) High-speed modulation of 850 nm InGaAsP/InGaP strain-compensated VCSELs. Electron Lett 39(14):1051–1053 58. 3 V SiGe laser driver IC. Technical digest LEOS summer topical meeting, paper no.

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