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Download Impurity Doping Processes in Silicon by F. F. Y. Wang PDF

By F. F. Y. Wang

This booklet introduces to non-experts numerous vital tactics of impurity doping in silicon and is going directly to speak about the equipment of choice of the focus of dopants in silicon. the traditional technique used is the dialogue technique, yet, because it has been sufficiently coated in lots of texts, this paintings describes the double-diffusion technique

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Lett. 3 4 (1979) 530. A. Seeger and K. P. Chik, Phys. Stat. Solidi 29 (1968) 455. C. L. Jones and A. F. W. Willoughby, Radiation Effects in Semiconductors 1976, IOP Conf. Ser. N o . 31 (Institute of Physics, Bristol, 1976) p. 194. [24] T. J. Parker, J. Appl. Phys. 38 (1971) 3471; J. Appl. Phys. 3 9 (1968) 2043. [25] N . D . Thai, Solid St. Electron. 13 (1970) 165; J. Appl. Phys. 41 (1970) 2859. [26] L. E. , Η. Gatos (Interscience, N e w York, 1960). [27] P. Baruch, C. Constantin, J. C. Pfister and R.

16 (Institute of Physics, Bristol, 1972) p. 170. [17] Μ. Yoshida, Ε. Arai, Η. Nakamura and Y. Terunuma, J. Appl. Phys. 4 5 (1974) 1498. [18] D . Shaw, Phys. Stat. Solidi b72 (1975) 11. [19] [20] [21] [22] [23] D . L. Kendall and R. Carpio, Proc. , 1977). W. C. Dash, J. Appl. Phys. 31 (1960) 2275. H. Strunk, U. Gosele and B. O. Kolbesen, Appl. Phys. Lett. 3 4 (1979) 530. A. Seeger and K. P. Chik, Phys. Stat. Solidi 29 (1968) 455. C. L. Jones and A. F. W. Willoughby, Radiation Effects in Semiconductors 1976, IOP Conf.

1977). W. C. Dash, J. Appl. Phys. 31 (1960) 2275. H. Strunk, U. Gosele and B. O. Kolbesen, Appl. Phys. Lett. 3 4 (1979) 530. A. Seeger and K. P. Chik, Phys. Stat. Solidi 29 (1968) 455. C. L. Jones and A. F. W. Willoughby, Radiation Effects in Semiconductors 1976, IOP Conf. Ser. N o . 31 (Institute of Physics, Bristol, 1976) p. 194. [24] T. J. Parker, J. Appl. Phys. 38 (1971) 3471; J. Appl. Phys. 3 9 (1968) 2043. [25] N . D . Thai, Solid St. Electron. 13 (1970) 165; J. Appl. Phys. 41 (1970) 2859.

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