By Giovanni Crupi, Dominique Schreurs
This groundbreaking ebook is the 1st to offer an advent to microwave de-embedding, displaying the way it is the cornerstone for waveform engineering. The authors of every bankruptcy essentially clarify the theoretical ideas, delivering a origin that helps linear and non-linear measurements, modelling and circuit layout. contemporary advancements and destiny traits within the box are lined all through, together with winning ideas for low-noise and tool amplifier layout. This booklet is a must have for these wishing to appreciate the whole power of the microwave de-embedding inspiration to accomplish winning ends up in the parts of measurements, modelling, and layout at excessive frequencies.
With this ebook you are going to learn:
- The theoretical heritage of high-frequency de-embedding for measurements, modelling, and design
- Details on employing the de-embedding thought to the transistor's linear, non-linear, and noise behaviour
- The impression of de-embedding on low-noise and tool amplifier design
- The contemporary advances and destiny developments within the box of high-frequency de-embedding
- Presents the idea and perform of microwave de-embedding, from the elemental rules to fresh advances and destiny trends
- Written via specialists within the box, all of whom are top researchers within the area
- Each bankruptcy describes theoretical history and provides experimental effects and useful applications
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Additional info for Microwave De-embedding. From Theory to Applications
Int J RF Microw Comput-Aided Eng June 2008;18(6):507e16.  Crupi G, Schreurs DMM-P, Caddemi A, Raffo A, Vannini G. Investigation on the non-quasi-static effect implementation for millimeter-wave FET models. Int J RF Microw Comput-Aided Eng January 2010;20(1):87e93. References  Crupi G, Schreurs DMM-P, Caddemi A. Theoretical and experimental determination of onset and scaling of non-quasi-static phenomena for interdigitated FinFETs. IET Circuits Dev Sys November 2010;5(6):531e8.  Root DE, Hughes B.
Nevertheless, the number of noise sources has been often increased by using circuit topologies containing a higher number of resistances, such as Rgd and additional extrinsic resistances [70,71]. 1, the reader can find a more comprehensive treatment of this subject in Chapters 2 and 3. 13 Noise equivalent circuit for a microwave FET. 2 Large-signal equivalent circuit The small-signal equivalent circuit determined under a wide range of operating bias points can be used as cornerstone for building the large-signal model.
Noise characteristics of gallium arsenide field-effect transistor. IEEE Trans Electron Dev September 1974;21(9):549e62.  Cappy A. Noise modeling and measurement techniques. IEEE Trans Microw Theory Tech January 1988;36(1):1e10.  Pospieszalski MW. Modeling of noise parameters of MESFET’s and MODFET’s and their frequency and temperature dependence. IEEE Trans Microw Theory Tech September 1989;37(9):1340e50.  Dambrine G, Raskin J-P, Danneville F, Vanhoenaker-Janvier D, Colinge J-P, Cappy A.