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Download Microwave Transistor Amplifiers: Analysis and Design by Guillermo Gonzalez PDF

By Guillermo Gonzalez

A unified presentation of the research and layout of microwave transistor amplifiers (and oscillators) - utilizing scattering parameters thoughts.

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12 RF and Microwave Power Transistors the power transistor market up to about 3 GHz at this time, and while the GaAs transistors were being developed for higher frequency applications than their silicon counterparts, they suffered from low gain and high noise. The performance limitation in GaAs BJTs was attributable to the low hole mobility in the p-type base region of the transistor. Even at the high base doping levels that were used to minimize the base contact resistance, this resulted in a relatively high base resistance, which led to the poor noise performance.

The maximum voltage swing is limited by the gate-to-drain breakdown voltage, and, as indicated earlier, both MOSFET and III–V FET technologies use doping and etching techniques to maximize the breakdown voltage. Gallium nitride heterojunction FETs have the advantage of being made from a wide band-gap material, which naturally has a large breakdown voltage; with careful processing methods, modern LDMOS devices can achieve breakdown voltages in excess of 100 V. The maximum drain current in III–V FETs depends on the maximum forward current permissible in the gate Schottky diode; exceeding this value can have catastrophic consequences.

The inversion regime remains at or close to the minimum value, with the depletion capacitance corresponding to its value at threshold. The reason for this is that the minority carrier electrons which comprise the inversion layer arise from the generation–recombination (G–R) processes at work in the semiconductor. These G–R processes have relatively long time constants, and so they cannot respond to the high-frequency excitation. The MOS transistor is created when the inversion layer of a MOS capacitor is used as the conducting channel between the source and drain regions.

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