By Peter Aaen
It is a e-book concerning the compact modeling of RF strength FETs. In it, you can find descriptions of characterization and dimension suggestions, research tools, and the simulator implementation, version verification and validation tactics which are had to produce a transistor version that may be used with self assurance by means of the circuit dressmaker. Written through semiconductor execs with decades' equipment modeling adventure in LDMOS and III-V applied sciences, this is often the 1st ebook to deal with the modeling necessities particular to high-power RF transistors. A technology-independent procedure is defined, addressing thermal results, scaling matters, nonlinear modeling, and in-package matching networks. those are illustrated utilizing the present market-leading high-power RF know-how, LDMOS, in addition to with III-V energy units. This publication is a accomplished exposition of FET modeling, and is a must have source for pro pros and new graduates within the RF and microwave energy amplifier layout and modeling neighborhood. All 3 authors paintings within the RF department at Freescale Semiconductor, Inc., in Tempe Arizona. Peter H. Aaen is Modeling staff supervisor, Jaime A. Pl? is layout association supervisor, and John wooden is Senior Technical Contributor chargeable for RF CAD and Modeling, and a Fellow of the IEEE.
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Additional info for Modeling and Characterization of RF and Microwave Power FETs (The Cambridge RF and Microwave Engineering Series)
12 RF and Microwave Power Transistors the power transistor market up to about 3 GHz at this time, and while the GaAs transistors were being developed for higher frequency applications than their silicon counterparts, they suﬀered from low gain and high noise. The performance limitation in GaAs BJTs was attributable to the low hole mobility in the p-type base region of the transistor. Even at the high base doping levels that were used to minimize the base contact resistance, this resulted in a relatively high base resistance, which led to the poor noise performance.
The maximum voltage swing is limited by the gate-to-drain breakdown voltage, and, as indicated earlier, both MOSFET and III–V FET technologies use doping and etching techniques to maximize the breakdown voltage. Gallium nitride heterojunction FETs have the advantage of being made from a wide band-gap material, which naturally has a large breakdown voltage; with careful processing methods, modern LDMOS devices can achieve breakdown voltages in excess of 100 V. The maximum drain current in III–V FETs depends on the maximum forward current permissible in the gate Schottky diode; exceeding this value can have catastrophic consequences.
The inversion regime remains at or close to the minimum value, with the depletion capacitance corresponding to its value at threshold. The reason for this is that the minority carrier electrons which comprise the inversion layer arise from the generation–recombination (G–R) processes at work in the semiconductor. These G–R processes have relatively long time constants, and so they cannot respond to the high-frequency excitation. The MOS transistor is created when the inversion layer of a MOS capacitor is used as the conducting channel between the source and drain regions.