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Download Nonlinear Transistor Model Parameter Extraction Techniques by Dr Matthias Rudolph, Christian Fager, David E. Root PDF

By Dr Matthias Rudolph, Christian Fager, David E. Root

In attaining actual and trustworthy parameter extraction utilizing this whole survey of state of the art ideas and techniques. A crew of specialists from and academia offers you insights right into a diversity of key issues, together with parasitics, intrinsic extraction, statistics, extraction uncertainty, nonlinear and DC parameters, self-heating and traps, noise, and package deal results. learn the way comparable techniques to parameter extraction should be utilized to assorted applied sciences. numerous real-world business examples and size effects express you the way the theories and techniques offered can be utilized in perform. even if you utilize transistor types for overview of equipment processing and also you have to comprehend the tools in the back of the versions you employ, otherwise you are looking to strengthen types for present and new gadget kinds, this is often all the advisor to parameter extraction.

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The advantage of this structure is that it provides a uniform transmission line running up to the device. This allows a more accurate, on-wafer calibration to be used to bring the error-corrected measurement planes closer to the DUT. S-parameter measurements for both the CPW- and MS-styled test structures involve a two-tiered approach. 1. 1. So, to first order, the tradeoff between these two structures is between the size of the structure and the accuracy of the DUT S-parameters, since the less accurate second tier has less to de-embed in the MS case.

M Golio, Microwave MESFETs & HEMTs, Norwood, MA: Artech House, 1991, ch. 2. [7] C. C. McAndrew, J. A. Seitchik, D. F. Bowers, M. Dunn, M. Foisy, I. Getreu, M. McSwain, S. Moinian, J. Parker, D. J. Roulston, M. Schroter, P. van Wijnen, and L. F. Wagner, “VBIC95, The Vertical Bipolar Inter-Company Model,” IEEE J. Solid/state Circuits, vol. 31, pp. 1476– 1483, Oct. 1996. [8] M. Schr¨oter and T-Y. Lee, “Physics-based minority charge and transit time modeling for bipolar transistors,” IEEE Trans. Electron Devices, vol.

8 mA/µm2 . 0). techniques presented here, and Professor Peter Asbeck of the University of California at San Diego for information on HBT model device equations. We would also like to thank the Agilent’s wafer fabrication facility personnel in Santa Rosa, California, USA for making the devices discussed in this chapter. References [1] W. R. Curtice, “A MESFET model for use in the design of GaAs integrated circuits,” IEEE Trans. Microw. , vol. 28, pp. 448–456, 1980. [2] R. Van Tuyl and C. Liechti, “Gallium arsenide digital integrated circuits,” Techn.

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